In-plane quasi-single-domain BaTiO<sub>3</sub> via interfacial symmetry engineering.
J. W. Lee, Kitae Eom, Tula R. Paudel, Bo Wang, Haidong Lu, Huaixun Huyan, S. Lindemann, Sangwoo Ryu, H. Lee, T. H. Kim, Yakun Yuan, Jacob A. Zorn, Shiming Lei, Wenpei Gao, Thomas Tybell, Venkatraman Gopalan, Xiaoqing Pan, Alexei Gruverman, Long‐Qing Chen, Evgeny Y. Tsymbal, Chang‐Beom Eom
Abstract
[Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.