Eight In. Wafer‐Scale Epitaxial Monolayer MoS<sub>2</sub>
Hua Yu, Liang‐Feng Huang, Lanying Zhou, Yalin Peng, Xiuzhen Li, Peng Yin, Jiaojiao Zhao, Mingtong Zhu, Shuopei Wang, Jieying Liu, Hongyue Du, Jian Tang, Songge Zhang, Yuchao Zhou, Nianpeng Lu, Kaihui Liu, Na Li, Guangyu Zhang
Abstract
Abstract Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS 2 ) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS 2 films and is demonstrated at a wafer scale up to 4‐in. In this study, the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS 2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐in. wafer‐scale monolayer MoS 2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm 2 V −1 s −1 and 10 7 , respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS 2 in practical industry‐scale applications.