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Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate

Liwen Sang, Bing Ren, Toshihide Nabatame, Masatomo Sumiya, Meiyong Liao

2020Journal of Alloys and Compounds23 citationsDOI

Topics & Concepts

Materials scienceOptoelectronicsCapacitanceSemiconductorOxideSubstrate (aquarium)SapphireHysteresisCondensed matter physicsElectrodeChemistryOpticsOceanographyMetallurgyGeologyPhysical chemistryLaserPhysicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials
Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate | Litcius