The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation
K. Ahmeda, Brendan Ubochi, Mustafa H. Alqaysi, Abdullah Al‐Khalidi, Edward Wasige, K. Kálna
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsGallium nitridePassivationThreshold voltageBreakdown voltageLayer (electronics)TransistorNitrideWide-bandgap semiconductorBarrier layerVoltageElectrical engineeringNanotechnologyEngineeringGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesSilicon Carbide Semiconductor Technologies