Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
A. Y. Polyakov, L. A. Alexanyan, М. Л. Скориков, А. В. Черных, Ivan Shchemerov, В. Н. Мурашев, Taehwan Kim, In‐Hwan Lee, S. J. Pearton
Topics & Concepts
Materials scienceNanopillarPhotoluminescenceOptoelectronicsReactive-ion etchingAnnealing (glass)PassivationQuantum wellLight-emitting diodeVacancy defectEtching (microfabrication)NanotechnologyOpticsChemistryNanostructureLaserCrystallographyComposite materialPhysicsLayer (electronics)GaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials