Growth mechanism of <b> <i>α</i> </b>-Ga2O3 on a sapphire substrate by mist chemical vapor deposition using acetylacetonated gallium source solutions
Kazuyuki Uno, Marika Ohta, Ichiro Tanaka
Abstract
α-Ga2O3 is a metastable phase of gallium oxide (Ga2O3) and is important for application in solar-blind region optoelectronic devices. High-quality α-Ga2O3 thin films can be grown by mist chemical vapor deposition (mist-CVD). We systematically investigate the growth mechanism of α-Ga2O3 by mist-CVD using acetylacetonated Ga source solutions. We propose a growth mechanism of α-Ga2O3 in mist-CVD in which acetylacetonate ligands anchor to surface hydroxyls and Ga–O bonds are formed by a ligand exchange mechanism. The origin of oxygen atoms and impurity concentration profiles in grown α-Ga2O3 thin films are examined by secondary ion mass spectroscopy.
Topics & Concepts
Chemical vapor depositionGalliumMistThin filmMetastabilitySubstrate (aquarium)SapphireEpitaxyImpurityMaterials scienceDeposition (geology)Secondary ion mass spectrometryMetalorganic vapour phase epitaxyChemistryAnalytical Chemistry (journal)Chemical engineeringInorganic chemistryIonNanotechnologyLayer (electronics)OpticsMetallurgyOrganic chemistryLaserPhysicsBiologyPaleontologySedimentEngineeringMeteorologyGeologyOceanographyGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques