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DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments

Stefano Bonaldo, Teng Ma, S. Mattiazzo, A. Basçhirotto, Christian Enz, Daniel M. Fleetwood, A. Paccagnella, Simone Gerardin

2022Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment26 citationsDOI

Topics & Concepts

TransconductanceThreshold voltageMaterials scienceOptoelectronicsTransistorNoise (video)Absorbed doseIrradiationMOSFETDegradation (telecommunications)InfrasoundCMOSVoltageElectrical engineeringPhysicsEngineeringImage (mathematics)Artificial intelligenceNuclear physicsComputer scienceAcousticsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignRadiation Effects in Electronics
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments | Litcius