Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering
Anjan Kumar Jena, Mousam Charan Sahu, Sandhyarani Sahoo, Sameer Kumar Mallik, Gopal K. Pradhan, J. Mohanty, Satyaprakash Sahoo
Topics & Concepts
Resistive random-access memoryMaterials scienceOptoelectronicsOxideVoltageGrapheneNanotechnologyBismuth ferriteMemristorBilayerElectrical engineeringFerroelectricityMultiferroicsDielectricChemistryMembraneBiochemistryEngineeringMetallurgyAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices