Enhanced carrier transport by transition metal doping in WS<sub>2</sub> field effect transistors
Maomao Liu, Sichen Wei, Simran Shahi, Hemendra Nath Jaiswal, Paolo Paletti, Sara Fathipour, Maja Remškar, Jun Jiao, Wansik Hwang, Fei Yao, Huamin Li
Abstract
FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1-3 orders of magnitude, and consequently elevate electron mobilities by 5-7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.
Topics & Concepts
Materials scienceDopantDopingContact resistanceField-effect transistorTransition metalTransistorOptoelectronicsElectron mobilityNanotechnologyElectronMetalLayer (electronics)Field effectCopperWork (physics)Electron transport chainCharge-carrier densityCondensed matter physicsInduced high electron mobility transistorChannel (broadcasting)2D Materials and ApplicationsNanowire Synthesis and ApplicationsGraphene research and applications