Two-dimensional transition metal dichalcogenides for post-silicon electronics
Xiankun Zhang, Hang Zhao, Xiaofu Wei, Yanzhe Zhang, Zheng Zhang, Yue Zhang
Abstract
Rapid advancements in information technology push the explosive growth in data volume, requiring greater computing-capability logic circuits. However, conventional computing-capability improving technology, which mainly relies on increasing transistor number, encounters a significant challenge due to the weak field-effect characteristics of bulk silicon-based semiconductors. Still, the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides (2D-TMDCs) materials enable excellent field-effect characteristics and multiple gate control ports, facilitating the integration of the functions of multiple transistors into one. Generally, the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor numbers. In other words, only using a small number, or even just one, 2D-TMDCs-based transistors to conduct the sophisticated logic operations that can be realized by many traditional transistors. In this review, from material selection, device structure optimization, and circuit architecture design, we discuss the developments, challenges, and prospects for 2D-TMDCs-based logic circuits.