Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics
Po‐Hsun Ho, Jun-Ru Chang, Chun‐Hsiang Chen, Chun‐Hsiang Chen, Cheng‐Hung Hou, C. C. Chiang, Min-Chuan Shih, Hung-Chang Hsu, Wen‐Hao Chang, Jing‐Jong Shyue, Ya‐Ping Chiu, Chun‐Wei Chen, Chun‐Wei Chen
Abstract
Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq –1 without gating) of monolayer MoS 2 and a high mobility and carrier concentration (4.1 × 10 13 cm –2 ). We employed our robust method for the successful contact doping of a monolayer MoS 2 Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.