Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures
Feng Wang, Jia Liu, Wenhao Huang, Ruiqing Cheng, Lei Yin, Junjun Wang, Marshet Getaye Sendeku, Yu Zhang, Xueying Zhan, Chongxin Shan, Zhenxing Wang, Jun He
Topics & Concepts
Materials scienceHeterojunctionFerroelectricityOptoelectronicsTransistorField-effect transistorHysteresisDielectricvan der Waals forceNanotechnologyCondensed matter physicsVoltageElectrical engineeringChemistryPhysicsOrganic chemistryEngineeringMolecule2D Materials and ApplicationsTopological Materials and PhenomenaGraphene research and applications