Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance
Omor Shoron, David Kealhofer, Manik Goyal, Timo Schumann, A. A. Burkov, Susanne Stemmer
Abstract
Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as topological insulators and topological semimetals when an external potential is applied across the system. Here, we report on the transverse magnetoresistance of thin films of cadmium arsenide, a topologically nontrivial, as we tune the electronic states and the Fermi level. We show that the appearance of weak localization and weak antilocalization sensitively reflects the relative contributions of multiple transport channels involving both gapless (massless) and gapped (massive) Dirac fermion states present in these films. The data are consistent with expectations of the different topological states of these films. Weak (anti-)localization phenomena can, therefore, serve as a probe of the types of Dirac fermions present in topological semimetals.