Direct Observation of the Electrically Triggered Insulator-Metal Transition in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">V</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>5</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> Far below the Transition Temperature
Coline Adda, Min‐Han Lee, Yoav Kalcheim, Pavel Salev, Rodolfo Rocco, Nicolás M. Vargas, Nareg Ghazikhanian, Chung-Pang Li, Grant C. Albright, M. J. Rozenberg, Iván K. Schuller
Abstract
Experiments reveal a strong connection between room-temperature resistive switching and a temperature-dependent insulator-to-metal transition in V${}_{3}$O${}_{5}$, making it a new material for potential neuromorphic computing applications.
Topics & Concepts
Neuromorphic engineeringProtein filamentVanadiumPhase transitionResistive touchscreenMaterials scienceMetal–insulator transitionOxidePhase (matter)Resistive random-access memoryMetalOptoelectronicsChemical physicsCondensed matter physicsPhysicsComputer scienceComposite materialArtificial intelligenceElectrodeMetallurgyComputer visionQuantum mechanicsArtificial neural networkAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsNeural Networks and Reservoir Computing