20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion
Neha Gupta, Aditya Jain, Ajay Kumar
Topics & Concepts
LinearityMaterials scienceTransconductanceMOSFETOptoelectronicsGallium nitrideNanowireThreshold voltageDistortion (music)TransistorVoltageElectrical engineeringNanotechnologyEngineeringAmplifierCMOSLayer (electronics)GaN-based semiconductor devices and materialsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design