Adsorption Analysis of SF<sub>6</sub> Decomposition Remnants on a 2D Doped InTe Monolayer: A DFT Approach
S. J. Khengar, H. R. Mahida, Harshal P. Patel, P. B. Thakor
Abstract
In SF 6 -submerged gas-insulated switchgear that is one of the major components of power-generating systems, it became necessary that it function properly. As time passes, SF 6 is decomposed to gas like HF, H 2 S, SO 2, SOF 2, and SO 2 F 2 . These decomposed remnants and other byproducts CO, CO 2, and CF 4 need to be detected for the proper function of the power system. The decomposed remnants and other byproducts are sensed via the InTe and doped InTe-F monolayers using density functional theory in this work. The physisorption-type gas sensing is observed by pristine and doped InTe monolayers. The adsorption analysis and electronic properties are calculated. The charge localization and redistribution are calculated by using the electron localization function and charge density difference. The selectivity of the InTe monolayer is understood by the work function. The detection limit of the InTe monolayer is verified by calculating the recovery time. Thus, all of the analyses suggest its potential application in gas-insulated switchgear (GIS).