Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>
Kaixuan Zhang, Youjin Lee, Matthew J. Coak, Junghyun Kim, Suhan Son, Inho Hwang, Dong‐Su Ko, Youngtek Oh, Insu Jeon, Dohun Kim, Changgan Zeng, Hyun‐Woo Lee, Je‐Geun Park
Abstract
Abstract Robust multi‐level spin memory with the ability to write information electrically is a long‐sought capability in spintronics, with great promise for applications. Here, nonvolatile and highly energy‐efficient magnetization switching is achieved in a single‐material device formed of van‐der‐Waals (vdW) topological ferromagnet Fe 3 GeTe 2 , whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin‐orbit‐torque magnetic random access memory based on conventional magnet/heavy‐metal systems. Most importantly, multi‐level states, switched by electrical current are also demonstrated, which can dramatically enhance the information capacity density and reduce computing costs. Thus, the observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of vdW magnets in the field of spin memory and spintronics.