A High-Performance ε-Ga2O3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging
Shuren Zhou, Qiqi Zheng, Chenxi Yu, Zhiheng Huang, Lingrui Chen, Hong Zhang, Honglin Li, Yuanqiang Xiong, Chunyang Kong, Lijuan Ye, Wanjun Li
Abstract
One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga2O3 films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga2O3 ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 1013 Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 105, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga2O3-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications.