Ferroelectric synaptic devices based on CMOS-compatible HfAlO<sub><i>x</i></sub>for neuromorphic and reservoir computing applications
Dahye Kim, Jihyung Kim, Seokyeon Yun, Jungwoo Lee, Euncho Seo, Sungjun Kim
Abstract
) is obtained. Furthermore, we show that paired-pulse facilitation, paired-pulse depression, and spike-timing-dependent plasticity can be utilized in HAO-based FTJs. In addition, this study demonstrates the use of an FTJ device as a physical reservoir to implement reservoir computing. Through a series of processes, the synaptic properties of FTJs are verified for the feasibility of their implementation as an artificial synaptic device.
Topics & Concepts
Neuromorphic engineeringFerroelectricityMaterials scienceNeural facilitationOptoelectronicsCMOSMemristorSynaptic plasticityComputer scienceElectronic engineeringEngineeringDielectricArtificial neural networkChemistryArtificial intelligenceReceptorBiochemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices