Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite
Thomas Ratz, Ngoc Duy Nguyen, Guy Brammertz, Bart Vermang, Jean‐Yves Raty
Abstract
Ge-containing kesterites for PV applications demonstrated their effectiveness in improving the cell V OC . The physical behaviour of defects is found to be a key mechanism, with the Ge Zn antisite appearing less detrimental than its Sn Zn counterpart.
Topics & Concepts
KesteriteMaterials scienceDopingCrystallographic defectCZTSBand gapCrystallographyOptoelectronicsChemistryChalcogenide Semiconductor Thin FilmsCopper-based nanomaterials and applicationsQuantum Dots Synthesis And Properties