Scattering-induced and highly tunable by gate damping-like spin-orbit torque in graphene doubly proximitized by two-dimensional magnet <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">Cr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ge</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Te</mml:mi><mml:mn>6</mml:mn></mml:msub></mml:math> and monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">WS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
Klaus Zollner, Marko D. Petrović, Kapildeb Dolui, Petr Plecháč, Branislav K. Nikolić, Jaroslav Fabian
Abstract
The authors design in silico a graphene-based van der Waals heterostructure where purely two-dimensional electronic transport generates nonequilibrium spin density in all spatial directions, due to scattering of impurities or potential barriers.
Topics & Concepts
Condensed matter physicsMaterials scienceMonolayerGraphenevan der Waals forceScatteringMagnetSpin (aerodynamics)TorqueHeterojunctionDensity functional theoryImpurityNon-equilibrium thermodynamicsNanowireOptoelectronicsWork (physics)FerromagnetismBallistic conductionPhysicsSpin densityTopological insulator2D Materials and ApplicationsGraphene research and applicationsTopological Materials and Phenomena