HIGH PERFORMANCE 2:1, 4:1 AND 8:1 BINARY AND TERNARY MULTIPLEXER REALIZATION USING CNTFET TECHNOLOGY
Vallabhuni Vijay, P Chandra Shekar, V. Nagaraju, S. China Venkateswarlu, Shaik Sadulla
Abstract
In the world of integrated circuits, CMOS has lost its accreditation during scaling beyond 32nm. The main drawbacks of using CMOS transistors are high power consumption and high leakage current. Scaling causes severe Short Channel Effects (SCE) which are difficult to overcome. CNTFET technologies modify these limitations by providing a stronger control over a thin silicon body. CNTFET device has a higher controllability, resulting relatively high on/off ratio. CNTFET devices can be used to increase the performance by reducing the leakage current and power dissipation. Carbon Nanotube Field Effect Transistor (CNTFET), one of nano electronic devices, is a transistor with its channel made of carbon Nanotube. CNTFET based devices offer high mobility for near-sensible transport, high carrier velocity for fast switching, as well as better electrostatic control due to the one-dimensional structure of CNTs. CNTFET is preferred over Si-MOSFET for logic design due to its magnificent thermal, mechanical and electrical properties. Now a days, low power and low energy have become an important issue in consumer electronics and it is necessary to do research in combinational circuits. One of the important elements in digital circuits is a multiplexer or data selector for processing multiple inputs with a single output. In this abstract, the different designs of multiplexer using CNTFET logic are analysed. CNTFET logic is one of the auspicious opportunity to conventional binary logic, since it is possible to achieve simplicity and low power dissipation due to the reduced circuit such as interconnects and chip area. This paper presents a design methodology which uses the combination of Binary multiplexers and Ternary multiplexers.