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Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI<sub>2</sub>Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S. Mali, Jyoti V. Patil, Julian A. Steele, Sachin R. Rondiya, Nelson Y. Dzade, Chang Kook Hong

2021ACS Energy Letters103 citationsDOIOpen Access PDF

Abstract

Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

Topics & Concepts

DopantPerovskite (structure)Materials scienceHalideDopingMetalEnergy conversion efficiencySolar cellThiocyanatePerovskite solar cellInorganic chemistryChemical engineeringOptoelectronicsChemistryMetallurgyEngineeringPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties
Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI<sub>2</sub>Br for Stable All-Inorganic Perovskite Solar Cells | Litcius