In-situ PECVD-based stoichiometric SiO2 layer for semiconductor devices
Duy Phong Pham, Hongrae Kim, Ji Won Choi, Donghyun Oh, Yung-Bin Chung, Woo-Seok Jeon, Jungyun Jo, Vinh Ai Dao, Suresh Kumar Dhungel, Junsin Yi
Topics & Concepts
Plasma-enhanced chemical vapor depositionPassivationSilaneChemical vapor depositionStoichiometryMaterials scienceArgonSemiconductorWaferSiliconLayer (electronics)Analytical Chemistry (journal)Chemical engineeringChemistryNanotechnologyOptoelectronicsComposite materialPhysical chemistryOrganic chemistryEngineeringSemiconductor materials and devicesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence