On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma
Gilyoung Choi, Alexander Efremov, Dae-Kug Lee, Choong-Ho Cho, Kwang‐Ho Kwon
Topics & Concepts
Etching (microfabrication)Reactive-ion etchingIonAnalytical Chemistry (journal)PlasmaPassivationChemistryPlasma etchingKineticsPlasma modelingMaterials scienceNanotechnologyLayer (electronics)Quantum mechanicsOrganic chemistryChromatographyPhysicsPlasma Diagnostics and ApplicationsSemiconductor materials and devicesMetal and Thin Film Mechanics