Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
Sapna D. Ponja, Sanjayan Sathasivam, Ivan P. Parkin, Claire J. Carmalt
Abstract
Abstract Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In 2 O 3 as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10 −4 Ω.cm) and highest carrier concentration (4.23 × 10 20 cm −3 ) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
Topics & Concepts
TriethylgalliumDiethylzincChemical vapor depositionMaterials scienceGalliumTransparent conducting filmDopingThin filmOptoelectronicsElectrical resistivity and conductivityZincCombustion chemical vapor depositionElectrical conductorChemical engineeringMetalorganic vapour phase epitaxyLayer (electronics)NanotechnologyEpitaxyCarbon filmChemistryCatalysisComposite materialMetallurgyOrganic chemistryEnantioselective synthesisElectrical engineeringEngineeringZnO doping and propertiesGa2O3 and related materialsCopper-based nanomaterials and applications