High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates
Mitta Divya, Jyoti Ranjan Pradhan, Sushree Sangita Priyadarsini, Subho Dasgupta
Abstract
Abstract The major limitations of solution‐processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully‐printed narrow‐channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In 2 O 3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In 2 O 3 layer and thereby obtain near‐vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈10 6 and simultaneous maximum current density of 172 µA µm −1 . Next, the depletion‐load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of V DD = 2 V. In addition, the near‐vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.