Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub> FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures
Chieh Lo, Shu-Chieh Chang, Kun-Tao Lin, Chung-Kuang Chen, Chen-Feng Chang, Feng-Shuo Zhang, Zong-Han Lu, Tien‐Sheng Chao
Abstract
We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results, respectively. By using low ALD temperature, the leakage current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ < 3\times 10^{-{5}}$ </tex-math></inline-formula> A/cm2 under ±2V), gate control ability, the memory window (>1.5V) andthe endurance (107 cycles) have been improved. These results suggest that a low atomic layer deposition temperature is a promising process for use in non-volatile memory devices.