Stateful implication logic based on perpendicular magnetic tunnel junctions
Wenlong Cai, Mengxing Wang, Kaihua Cao, Huaiwen Yang, Shouzhong Peng, Huisong Li, Weisheng Zhao
Topics & Concepts
Tunnel magnetoresistancePerpendicularSpintronicsComputer scienceLogic gateMaterials scienceMagnetoresistive random-access memoryNAND gateMagnetic anisotropyAND gateSpin-transfer torqueElectrical engineeringOptoelectronicsFerromagnetismMagnetic fieldCondensed matter physicsPhysicsEngineeringRandom access memoryMagnetizationComputer hardwareQuantum mechanicsGeometryMathematicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesMagnetic properties of thin films