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Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer

D. Surya Reddy, V. Rajagopal Reddy, V. Janardhanam, Chel‐Jong Choi

2024Vacuum12 citationsDOI

Topics & Concepts

Materials scienceOxideHolmiumSchottky barrierCurrent (fluid)Chemical engineeringMetallurgyOptoelectronicsThermodynamicsLaserOpticsEngineeringDiodePhysicsSemiconductor materials and devicesSemiconductor materials and interfacesGa2O3 and related materials
Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer | Litcius