Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits
Maksim Andreev, Jae‐Woong Choi, Jiwan Koo, Hyeongjun Kim, Sooyoung Jung, Kwan‐Ho Kim, Jin‐Hong Park
Abstract
is employed as a channel material for all devices comprising the inverters. The MVL inverter operation principle and the mechanism of the multiple logic state formation are analyzed in detail. The proposed concept is practically verified by the fabrication of a ternary inverter.
Topics & Concepts
TransconductanceInverterAmbipolar diffusionCMOSElectronic circuitLogic gateCapacitanceMaterials scienceField-effect transistorTransistorElectronic engineeringTernary operationElectrical engineeringOptoelectronicsVoltageComputer scienceEngineeringPhysicsElectronElectrodeQuantum mechanicsProgramming languageSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices