Planar defect–free pure red perovskite light-emitting diodes via metastable phase crystallization
Yong‐Hui Song, Jing Ge, Li‐Bo Mao, Kunhua Wang, Xiaolin Tai, Qian Zhang, Qian Zhang, Le Tang, Jing‐Ming Hao, Jisong Yao, Jingjing Wang, Tao Ma, Jun‐Nan Yang, Yi‐Feng Lan, Xue‐Chen Ru, Li‐Zhe Feng, Guozhen Zhang, Yue Lin, Qun Zhang, Qun Zhang, Hong‐Bin Yao
Abstract
Solution-processable all-inorganic CsPbI 3− x Br x perovskite holds great potential for pure red light-emitting diodes. However, the widely existing defects in this mixed halide perovskite markedly limit the efficiency and stability of present light-emitting diode devices. We here identify that intragrain Ruddlesden-Popper planar defects are primary forms of such defects in the CsPbI 3− x Br x thin film owing to the lattice strain caused by inhomogeneous halogen ion distribution. To eliminate these defects, we develop a stepwise metastable phase crystallization strategy to minimize the CsPbI 3− x Br x perovskite lattice strain, which brings planar defect–free CsPbI 3− x Br x thin film with improved radiative recombination, narrowed emission band, and enhanced spectral stability. Using these high-quality thin films, we fabricate spectrally stable pure red perovskite light-emitting diodes, showing 17.8% external quantum efficiency and 9000 candela meter −2 brightness with color coordinates required by Rec. 2020.