Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction
Yixin Xiao, Srinivas Vanka, Tuan Anh Pham, Wan Jae Dong, Yi Sun, Xianhe Liu, Ishtiaque Ahmed Navid, Joel B. Varley, Hamed Hajibabaei, Thomas W. Hamann, Tadashi Ogitsu, Zetian Mi
Abstract
Tuning the surface structure of the photoelectrode provides one of the most effective ways to address the critical challenges in artificial photosynthesis, such as efficiency, stability, and product selectivity, for which gallium nitride (GaN) nanowires have shown great promise. In the GaN wurtzite crystal structure, polar, semipolar, and nonpolar planes coexist and exhibit very different structural, electronic, and chemical properties. Here, through a comprehensive study of the photoelectrochemical performance of GaN photocathodes in the form of films and nanowires with controlled surface polarities we show that significant photoelectrochemical activity can be observed when the nonpolar surfaces are exposed in the electrolyte, whereas little or no activity is measured from the GaN polar c-plane surfaces. The atomic origin of this fundamental difference is further revealed through density functional theory calculations. This study provides guideline on crystal facet engineering of metal-nitride photo(electro)catalysts for a broad range of artificial photosynthesis chemical reactions.