Litcius/Paper detail

Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET

Girish Wadhwa, Jeetendra Singh

2020Applied Physics A21 citationsDOI

Topics & Concepts

Work functionElectrodeStack (abstract data type)DopingOptoelectronicsMaterials scienceMetal gateNanotechnologyElectrical engineeringGate oxideChemistryComputer scienceLayer (electronics)EngineeringTransistorVoltagePhysical chemistryProgramming languageAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications
Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET | Litcius