Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications
R.K. Kaneriya, Chiranjit Karmakar, Gunjan Rastogi, Mastu Patel, R. B. Upadhyay, Punam Pradeep Kumar, Amartya Bhattacharya
Topics & Concepts
HeterojunctionMaterials scienceOptoelectronicsPhotoluminescenceHigh-electron-mobility transistorLayer (electronics)Wide-bandgap semiconductorRaman spectroscopyElectron mobilityTransistorNanotechnologyOpticsVoltageQuantum mechanicsPhysicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties