Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
Masanori Natsui, Akira Tamakoshi, H. Honjo, Takahiro Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, Hiroshi Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
Abstract
We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have a read-disturbance-free characteristic. The SOT-MRAM fabricated by a 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition. The SOT-MRAM is also implemented in a dual-port configuration utilizing three-terminal structure of the device, which realizes a wide bandwidth applicable to high-speed applications.
Topics & Concepts
Magnetoresistive random-access memoryCMOSElectrical engineeringVoltagePort (circuit theory)Bandwidth (computing)Dual (grammatical number)OptoelectronicsComputer scienceMaterials scienceComputer hardwareEngineeringRandom access memoryTelecommunicationsLiteratureArtMagnetic properties of thin filmsQuantum and electron transport phenomenaFerroelectric and Negative Capacitance Devices