A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications
Adrija Mukherjee, Papiya Debnath, D. Nirmal, Manash Chanda
Topics & Concepts
Digital electronicsInverterQuantum tunnellingElectrical engineeringLogic gateElectronic engineeringCapacitancePower–delay productNAND gateElectronic circuitVoltageEngineeringOptoelectronicsComputer sciencePhysicsTransistorQuantum mechanicsElectrodeAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices