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Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current

Yanni Zhang, Jincheng Zhang, Hong Zhou, Tao Zhang, Haiyong Wang, Zhaoqing Feng, Yue Hao

2020Solid-State Electronics28 citationsDOI

Topics & Concepts

Reverse leakage currentMaterials scienceThermionic emissionOptoelectronicsCurrent (fluid)Schottky diodeAnodeDiodeSchottky barrierTungstenQuantum tunnellingLow voltageVoltageElectrical engineeringElectrodeChemistryPhysicsQuantum mechanicsMetallurgyEngineeringPhysical chemistryElectronGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials
Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current | Litcius