Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals
Sheng'ou Lu, Binjie Xu, Yazhe Wang, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han
Abstract
The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.
Topics & Concepts
Basal planeDegree (music)Materials sciencePlane (geometry)CrystallographyDislocationDistribution (mathematics)Condensed matter physicsSingle crystalGeometryComposite materialMathematicsPhysicsChemistryMathematical analysisAcousticsSilicon Carbide Semiconductor TechnologiesAluminum Alloys Composites PropertiesSemiconductor materials and interfaces