Theoretical investigation of nonvolatile electrical control behavior by ferroelectric polarization switching in two-dimensional MnCl<sub>3</sub>/CuInP<sub>2</sub>S<sub>6</sub> van der Waals heterostructures
Zheng Li, Baozeng Zhou
Abstract
A model of atom-thick multiferroic memory whose data writing depends on ferroelectric CuInP<sub>2</sub>S<sub>6</sub> and data reading is based on different electric signals induced by magnetoelectrical coupling.
Topics & Concepts
FerroelectricityMaterials scienceHeterojunctionPolarization (electrochemistry)Multiferroicsvan der Waals forceNon-volatile memoryReading (process)Condensed matter physicsAtom (system on chip)OptoelectronicsNanotechnologyPhysical chemistryPhysicsDielectricMoleculeComputer scienceChemistryQuantum mechanicsEmbedded systemLawPolitical sciencePerovskite Materials and Applications2D Materials and ApplicationsMultiferroics and related materials