Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors
Sergio Puebla, Thomas Pucher, V. Rouco, Gabriel Sánchez‐Santolino, Yong Xie, Víctor Zamora, Fabián Cuellar, F. J. Mompeán, C. León, Joshua O. Island, M. Garcı́a-Hernández, J. Santamarı́a, Carmen Munuera, Andrés Castellanos-Gómez
Abstract
dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.