High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates
Shuai Wang, Zhenjie Lv, Shenglin Wang, Hongyu Chai, Wanlin Liu, Kehan Jiang, Xiaoguang Yang, Tao Yang
Abstract
High-quality single-frequency semiconductor lasers play a key role in silicon optical integrated systems. Combining high density 8-stacked quantum dot (QD) material and low–loss laterally coupled gratings, we here demonstrate a high output power, low noise, and insensitivity to light feedback 1.3 µm InAs/GaAs QD distributed feedback (DFB) laser grown on Si(001) substrates. For a QD DFB laser of a 3 × 1500 µm 2 cavity, it exhibits a high single-mode output light power of up to 25 mW at 20 °C and 1.8 mW at 70 °C, respectively and maintains a stable single–mode operation in the entirely measured temperature range with a maximum side mode suppression ratio (SMSR) of 56.5 dB. Furthermore, the laser has an average relative intensity noise value low to –155.9 dB/Hz and a Lorentzian linewidth narrow to 243 kHz. In addition, the laser shows an insensitivity to optical feedback with a feedback level of –24.9 dB. Lastly, a 7-channel QD DFB laser array emitting at wavelengths from 1274.5 nm to 1290.0 nm are also exhibited with all SMSRs of higher than 45 dB. The results achieved here enable a practical single-frequency Si-based light source for the development of high-performance silicon photonic chips.