Surface-state-induced upward band bending in P doped g-C<sub>3</sub>N<sub>4</sub> for the formation of an isotype heterojunction between bulk g-C<sub>3</sub>N<sub>4</sub> and P doped g-C<sub>3</sub>N<sub>4</sub>: photocatalytic hydrogen production
Nithya Thangavel, Kavitha Pandi, A. R. Mahammed Shaheer, Bernaurdshaw Neppolian
Abstract
The staggered type heterojunction with g-C<sub>3</sub>N<sub>4</sub> based nanomaterials has received much attention owing to its change in chemical potential between two semiconductors.
Topics & Concepts
HeterojunctionBand bendingDopingSemiconductorMaterials scienceNanomaterialsChemical stateNanotechnologyCondensed matter physicsOptoelectronicsChemical engineeringPhysicsX-ray photoelectron spectroscopyEngineeringAdvanced Photocatalysis TechniquesPerovskite Materials and ApplicationsMXene and MAX Phase Materials