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Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer

Yun-Ju Cho, Young-Ha Kwon, Nak‐Jin Seong, Kyu-Jeong Choi, Chi‐Sun Hwang, Sung‐Min Yoon

2024Materials Science in Semiconductor Processing12 citationsDOI

Topics & Concepts

Materials scienceTrap (plumbing)Quantum tunnellingOptoelectronicsScalingChannel (broadcasting)Layer (electronics)Charge (physics)TransistorNanotechnologyElectrical engineeringVoltagePhysicsGeometryQuantum mechanicsMeteorologyEngineeringMathematicsThin-Film Transistor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design
Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer | Litcius