Surface plasmon enhanced InAs-based mid-wavelength infrared photodetector
Ziji Zhou, Hongyu Lin, Xiaohang Pan, Chong Tan, Dongjie Zhou, Zhengji Wen, Yan Sun, Shuhong Hu, Ning Dai, Junhao Chu, Jiaming Hao
Abstract
High performance photodetectors operating in the mid-wavelength infrared spectral range are of great significance in many applications such as defense, surveillance, gas sensing, and night vision. A key parameter in the design of infrared detectors is the thickness of the absorber layer; reaching high absorption with a thin absorber layer can significantly enhance the performance of the device. In this work, we demonstrate the enhancement of InAs-base infrared detectors using surface plasmon nanostructures. Experimental results show that our device exhibits broadband enhancement compared to the reference with an increase in peak responsivity of about 50%. Further analysis shows that the enhancement of the device is attributed to the near-field localization effect of the plasma structure, which is well demonstrated by the experimental dual-peak spectrum. Such mechanisms provide valuable insight into the plasmon-enhanced infrared photodetector.