Litcius/Paper detail

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Ekin Kizilkan, Utku Karaca, Vladimir Pešić, Myung-Jae Lee, Claudio Bruschini, A. J. SpringThorpe, Alexandre W. Walker, Costel Flueraru, O. J. Pitts, Edoardo Charbon

2022IEEE Journal of Selected Topics in Quantum Electronics26 citationsDOIOpen Access PDF

Abstract

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300 K and 225 K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> and it decreases to 5 cps/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> at 225 K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300 K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR).

Topics & Concepts

OptoelectronicsIndium gallium arsenideDiodePhotonSingle-photon avalanche diodeMaterials scienceAvalanche photodiodeAvalanche diodePhoton countingGallium arsenideOpticsPhysicsDetectorQuantum mechanicsBreakdown voltageVoltageAdvanced Optical Sensing TechnologiesIntegrated Circuits and Semiconductor Failure AnalysisAdvanced Fluorescence Microscopy Techniques