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Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications

B. Mounika, J. Ajayan, Sandip Bhattacharya

2023Micro and Nanostructures15 citationsDOI

Topics & Concepts

Materials scienceHigh-electron-mobility transistorOptoelectronicsDopingWaferWork functionThreshold voltageElectron mobilityBarrier layerSurface roughnessTransistorMetal gateLayer (electronics)VoltageElectrical engineeringNanotechnologyGate oxideComposite materialEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor Quantum Structures and Devices
Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications | Litcius