Litcius/Paper detail

A 0.5-V 0.88-mW Low Noise Amplifier With Active and Passive G<sub>m</sub> Enhancements in Sub-6 GHz Band

Guangyin Feng, Lifu Zheng, Yanjie Wang, Quan Xue

2023IEEE Microwave and Wireless Technology Letters15 citationsDOI

Abstract

This letter presents a sub-1 V low-noise amplifier (LNA) with active and passive <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula> enhancements for low-power applications in the sub-6 GHz band. By using an enhanced folded cascode structure with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula> -boosting techniques at the common-gate (CG) stage, the proposed LNA achieves high gain and low noise with low power consumption. Implemented in GlobalFoundries <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.18 \mu \text{m}$ </tex-math></inline-formula> CMOS process, the proposed LNA with a core area of 0.42 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> presents a power gain of 14.5 dB at 5.8 GHz and a minimum noise figure of 3.2 dB. The LNA consumes a total dc power of 0.88 mW from a supply voltage of 0.5 V.

Topics & Concepts

AmplifierNotationElectrical engineeringNoise (video)MathematicsAlgorithmComputer scienceTopology (electrical circuits)CMOSEngineeringArtificial intelligenceArithmeticImage (mathematics)Radio Frequency Integrated Circuit DesignAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices