Anomalous Nernst effect and topological Nernst effect in the ferrimagnetic nodal-line semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>6</mml:mn></mml:msub></mml:mrow></mml:math>
Chen Ran, Xinrun Mi, Junying Shen, Honghui Wang, Kunya Yang, Yan Liu, Guiwen Wang, Guoyu Wang, Youguo Shi, Aifeng Wang, Yisheng Chai, Xiaolong Yang, Mingquan He, Xin Tong, Xiaoyuan Zhou
Abstract
In the ferrimagnetic nodal-line semiconductor ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$, colossal magnetoresistance (CMR) arises below ${T}_{\mathrm{c}}=78$ K due to the interplay of magnetism and topological nodal-line electronic structures. Here, we present electrical and thermoelectric transport properties of ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$. Below ${T}_{\mathrm{c}}$, the Nernst signal is dominated by anomalous Nernst effect (ANE) in the high-field region above 3 T. The scaling ratio between the ANE and magnetization is comparable to that in conventional magnetic materials, suggesting minor contributions from the nodal-line structure. In the low-field region (0 $\ensuremath{\sim}3$ T) where the CMR is most apparent, possible signatures of topological Nernst effect (TNE) are found, which are likely associated with the noncollinear magnetic structure.