ZrNiSn-based compounds with high thermoelectric performance and ultralow lattice thermal conductivity via introduction of multiscale scattering centers
Ruonan Min, Yanxia Wang, Xue Jiang, Rongchun Chen, Mingyang Li, Huijun Kang, Xiong Yang, Zongning Chen, Enyu Guo, Tongmin Wang
Abstract
The high lattice thermal conductivity of half-Heuslers (HHs) restricts the further enhancement of their thermoelectric figure-of-merit (ZT). In this study, multiscale scattering centers, such as point defects, dislocations, and nanoprecipitates, are synchronously introduced in a n-type ZrNiSn-based HH matrix through Nb doping and Hf substitution. The lattice thermal conductivity is substantially decreased from 4.55 (for the pristine ZrNiSn) to 1.8 W m−1 K−1 at 1123 K via phonon scattering over a broad wavelength range through the adjustment of multiscale defects. This value is close to the theoretically estimated lowest thermal conductivity. The power factor (PF) is enhanced from 3.25 (for the pristine ZrNiSn) to 5.01 mW m−1 K−2 for Zr0.66Hf0.3Nb0.04NiSn at 1123 K owing to the donor doping and band regulation via Nb doping and Hf substitution. This can be ascribed to the synergistic interaction between the lowering of the lattice thermal conductivity and retention of the high PF. Consequently, a ZT value of as high as 1.06 is achieved for Zr0.66Hf0.3Nb0.04NiSn at 1123 K. This work demonstrates that these actions are effective in jointly manipulating the transport of electrons and phonons, thereby improving the thermoelectric performance through defect engineering.